由薄複晶矽經熱氧化或熱氮化所製備之穿隧氧化層

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	焦德民	en_US
dc.contributor.author	雷添福	en_US
dc.contributor.author	李崇仁	en_US
dc.date.accessioned	2014-12-12T02:03:05Z	-
dc.date.available	2014-12-12T02:03:05Z	-
dc.date.issued	1984	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT732428009	en_US
dc.identifier.uri	http://hdl.handle.net/11536/52028	-
dc.language.iso	en_US	en_US
dc.title	由薄複晶矽經熱氧化或熱氮化所製備之穿隧氧化層	zh_TW
dc.title	Tunnel oxide prepared by thermal oxidation or nitridation of a thin polysilicon film on silicon	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子研究所	zh_TW
顯示於類別：	畢業論文