A Robust Data Retention Characteristic of Sol-Gel-Derived Nanocrystal Memory by Hot-Hole Trapping

Abstract

A new sol-gel-derived Ti(x)Zr(y)Si(z)O nanocrystal (NC) memory with a high-performance data retention characteristic is demonstrated by the hot-hole-trapping method. Prior to rapid thermal annealing, the high-density NC layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride. The electrical properties of the sol-gel-derived NC memory are demonstrated in terms of memory window, charge retention, program speed, and endurance. The memory window of the NC memory from the novel hot-hole-trapping mechanism can be achieved up to 4.18 +/- 0.21 V, and long retention times obtained from extrapolation up to 10(6) s are observed as 8%, 13%, and 21% window narrowing under respective temperatures of 25 degrees C, 85 degrees C, and 125 degrees C. The good electrical performance is attributed to the contribution of the high density of isolated NCs and hole-trapped into the deep-trap energy level, so no significant lateral and vertical charge leakage occurs.