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dc.contributor.authorTsai, C. Y.en_US
dc.contributor.authorChiang, K. C.en_US
dc.contributor.authorLin, S. H.en_US
dc.contributor.authorHsu, K. C.en_US
dc.contributor.authorChi, C. C.en_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2014-12-08T15:06:39Z-
dc.date.available2014-12-08T15:06:39Z-
dc.date.issued2010-07-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2010.2049636en_US
dc.identifier.urihttp://hdl.handle.net/11536/5203-
dc.description.abstractWe have fabricated high-k Ni/ZrO(2)/TiN metal-insulator-metal capacitors with a very high 52-fF/mu m(2) capacitance density, a low leakage current of 1.6 x 10(-7) A/cm(2), and good ten-year reliability with a small Delta C/C of 1.7% at 2 V. From X-ray diffraction measurements, laser annealing can improve the permittivity of ZrO(2) due to tetragonal-phase formation which in turn helps enhance capacitance density and reliability. Such excellent device integrity is attributed to the combination of enhanced ZrO(2) tetragonal phase by laser annealing, high work-function Ni electrode, and good bottom-interface treatment.en_US
dc.language.isoen_USen_US
dc.titleImproved Capacitance Density and Reliability of High-k Ni/ZrO(2)/TiN MIM Capacitors Using Laser-Annealing Techniqueen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2010.2049636en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume31en_US
dc.citation.issue7en_US
dc.citation.spage749en_US
dc.citation.epage751en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
Appears in Collections:Articles