統計資料
總造訪次數
| 檢視 | |
|---|---|
| Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs | 104 |
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| 000279319600005.pdf | 7 |
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| 檢視 | |
|---|---|
| Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs | 104 |
| 檢視 | |
|---|---|
| 000279319600005.pdf | 7 |
| 檢視 | |
|---|---|
| 中國 | 96 |
| 美國 | 7 |
| 檢視 | |
|---|---|
| Shenzhen | 96 |
| Kensington | 3 |
| Menlo Park | 2 |
| Edmond | 1 |
| University Park | 1 |