完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Shaltiel, D. | en_US |
dc.contributor.author | von Nidda, H-A Krug | en_US |
dc.contributor.author | Rosenstein, B. | en_US |
dc.contributor.author | Shapiro, B. Ya | en_US |
dc.contributor.author | Golosovsky, M. | en_US |
dc.contributor.author | Shapiro, I. | en_US |
dc.contributor.author | Loidl, A. | en_US |
dc.contributor.author | Bogoslavsky, B. | en_US |
dc.contributor.author | Fujii, T. | en_US |
dc.contributor.author | Watanabe, T. | en_US |
dc.contributor.author | Tamegai, T. | en_US |
dc.date.accessioned | 2014-12-08T15:06:40Z | - |
dc.date.available | 2014-12-08T15:06:40Z | - |
dc.date.issued | 2010-07-01 | en_US |
dc.identifier.issn | 0953-2048 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0953-2048/23/7/075001 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/5214 | - |
dc.description.abstract | A memory effect in the Josephson vortex system created by a magnetic field in the highly anisotropic superconductors Bi2212 and Bi2223 is demonstrated using microwave power absorption. This surprising effect appears despite a very low viscosity of Josephson vortices compared to Abrikosov vortices. The superconductor is field-cooled in a DC magnetic field H(m) oriented parallel to the CuO planes through the critical temperature T(c) down to 4 K, with subsequent reduction of the field to zero and again above H(m). A large microwave power absorption signal is observed at a magnetic field just above the cooling field, clearly indicating a memory effect. The dependence of the signal on a deviation of the magnetic field from H(m) is the same for a wide range of H(m) from 1500 to 17 000 G. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Field cooling memory effect in Bi2212 and Bi2223 single crystals | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0953-2048/23/7/075001 | en_US |
dc.identifier.journal | SUPERCONDUCTOR SCIENCE & TECHNOLOGY | en_US |
dc.citation.volume | 23 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000279873400003 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |