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dc.contributor.authorYang, M. D.en_US
dc.contributor.authorLiao, W. C.en_US
dc.contributor.authorShu, G. W.en_US
dc.contributor.authorLiu, Y. K.en_US
dc.contributor.authorShen, J. L.en_US
dc.contributor.authorWu, C. H.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.authorLee, Y. C.en_US
dc.date.accessioned2014-12-08T15:06:41Z-
dc.date.available2014-12-08T15:06:41Z-
dc.date.issued2010-07-01en_US
dc.identifier.issn0038-1098en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.ssc.2010.04.004en_US
dc.identifier.urihttp://hdl.handle.net/11536/5227-
dc.description.abstractA photoluminescence (PL) technique is presented to measure the junction temperature of GaAs solar cells. The technique utilizes the pulse-width modulation of excitation laser and the temperature dependence of PL spectra. The apparent change of PL energy on duty cycle can be advantageously used for the determination of the junction temperature. Varying the duty cycle from 10% to 75% causes an increase of 2.9 Kin the junction temperature of GaAs solar cells. The carrier temperature of the junction layer was studied to confirm the result obtained from the pulse-width modulation PL (C) 2010 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSemiconductorsen_US
dc.subjectThermodynamic propertiesen_US
dc.subjectLuminescenceen_US
dc.titleMeasuring junction temperature of GaAs solar cells using pulse-width modulation photoluminescenceen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.ssc.2010.04.004en_US
dc.identifier.journalSOLID STATE COMMUNICATIONSen_US
dc.citation.volume150en_US
dc.citation.issue27-28en_US
dc.citation.spage1217en_US
dc.citation.epage1220en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000279699800013-
dc.citation.woscount2-
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