1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTsai, Chih-Tsungen_US
dc.contributor.authorHuang, Sheng-Yaoen_US
dc.contributor.authorChen, Shih-Chingen_US
dc.contributor.authorHu, Chih-Weien_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorTsai, Ming-Jinnen_US
dc.date.accessioned2014-12-08T15:06:41Z-
dc.date.available2014-12-08T15:06:41Z-
dc.date.issued2010-06-28en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3456379en_US
dc.identifier.urihttp://hdl.handle.net/11536/5242-
dc.description.abstractThe InGaZnO taken as switching layer in resistive nonvolatile memory is proposed in this paper. The memory cells composed of Ti/InGaZnO/TiN reveal the bipolar switching behavior that keeps stable resistance ratio of 10(2) with switching responses over 100 cycles. The resistance switching is ascribed to the formation/disruption of conducting filaments upon electrochemical reaction near/at the bias-applied electrode. The influence of electrode material on resistance switching is investigated through Pt/InGaZnO/TiN devices, which perform the unipolar and bipolar behavior as applying bias on Pt and TiN electrode, respectively. Experimental results demonstrate that the switching behavior is selective by the electrode. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456379]en_US
dc.language.isoen_USen_US
dc.subjectelectric resistanceen_US
dc.subjectelectrochemical electrodesen_US
dc.subjectgallium compoundsen_US
dc.subjectindium compoundsen_US
dc.subjectMIS structuresen_US
dc.subjectplatinumen_US
dc.subjectpoint contactsen_US
dc.subjectrandom-access storageen_US
dc.subjectsemiconductor storageen_US
dc.subjectsemiconductor thin filmsen_US
dc.subjecttitaniumen_US
dc.subjecttitanium compoundsen_US
dc.subjectzinc compoundsen_US
dc.titleInfluence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3456379en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume96en_US
dc.citation.issue26en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000279514400030-
dc.citation.woscount85-
顯示於類別：期刊論文


文件中的檔案：

  1. 000279514400030.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。

相關內容
Loading...