統計資料
總造訪次數
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Characterization of doped Bi4Ge3O12 single crystals by light-induced absorption, electrical and photoelectrical measurements | 101 |
本月總瀏覽
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中國 | 95 |
美國 | 6 |
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Shenzhen | 95 |
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Characterization of doped Bi4Ge3O12 single crystals by light-induced absorption, electrical and photoelectrical measurements | 101 |
檢視 |
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檢視 | |
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中國 | 95 |
美國 | 6 |
檢視 | |
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Shenzhen | 95 |
Menlo Park | 4 |
Kensington | 2 |