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dc.contributor.authorChen, Pin-Yien_US
dc.contributor.authorChou, Chen-Chiaen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.contributor.authorChen, Haydnen_US
dc.date.accessioned2014-12-08T15:06:46Z-
dc.date.available2014-12-08T15:06:46Z-
dc.date.issued2010-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.49.061506en_US
dc.identifier.urihttp://hdl.handle.net/11536/5315-
dc.description.abstractThe second phase and defect formation mechanisms of [Bi(0.5)(Na(1-x)K(x))(0.5)]TiO(3) (BNKT100x) ceramics were investigated using electron microscopy, X-ray photoelectron spectroscopy (XPS), and electrical properties measurement. Experimental results indicated that second phase formation induces Bi-rich regions and compositional inhomogeneity within the matrix owing to the thermodynamic stability of potassium titanate. The Ti valence transition for BNKT ceramics sintered in air might be ascribed to the formation of secondary phase and low oxygen atmosphere, rather than simply attributed to the volatilization of bismuth. Li substitution at the A-site in BNKT ceramics suppresses formation of the second phase and Ti valence transition. Appropriate atmosphere control during material processing, such as sintering at higher oxygen pressure, and post oxidization annealing suppress oxygen vacancies and titanium valence transition, and therefore decrease the leakage current as well as improve electrical properties. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/JJAP.49.061506en_US
dc.language.isoen_USen_US
dc.titleSecond Phase and Defect Formation in Bi(0.5)Na(0.5-x)K(x)TiO(3) Ceramicsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.49.061506en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume49en_US
dc.citation.issue6en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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