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dc.contributor.authorChen, Pin-Yien_US
dc.contributor.authorChou, Chen-Chiaen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.contributor.authorChen, Haydnen_US
dc.date.accessioned2014-12-08T15:06:46Z-
dc.date.available2014-12-08T15:06:46Z-
dc.date.issued2010-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.49.061505en_US
dc.identifier.urihttp://hdl.handle.net/11536/5316-
dc.description.abstractThe microstructures and conductivities of lead-free ceramics [Bi(0.5)(Na(1-x)K(x))(0.5)]TiO(3) with x = 0.18 (BNKT) and lead-based ceramics of x(0.94PbZn(1/3)Nb(2/3)O(3) + 0.06BaTiO(3)) + (1 - x)PbZr(y)Ti(1-y)O(3) with x = 0.5, y = 0.52 (PBZNZT) were investigated. Experimental results show that the activation energy of grain boundary conductivity is higher than that of grain conductivity for the BNKT system, indicating that the Bi(2)O(3) evaporation of grains induces an easy conduction path through grains. However, the activation energy of grain boundary conductivity is lower than that of grain conductivity for the PBZNZT system, which might be attributed to the charged particles in the amorphous phase at grain boundaries, participating in the conduction process. A conduction model of both grain and grain boundary conductivities was proposed, and the microstructural characteristics and AC impedance data of ferroelectric ceramics correlate fairly well, suggesting that impedance spectroscopy is an efficient characterization technique for the grain boundary engineering of ferroelectric ceramics. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/JJAP.49.061505en_US
dc.language.isoen_USen_US
dc.titleCorrelation of Microstructures and Conductivities of Ferroelectric Ceramics Using Complex Impedance Spectroscopyen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.49.061505en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume49en_US
dc.citation.issue6en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000278963000030-
dc.citation.woscount2-
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