完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLin, Chuan-Shengen_US
dc.contributor.authorDung, Lan-Rongen_US
dc.date.accessioned2014-12-08T15:06:47Z-
dc.date.available2014-12-08T15:06:47Z-
dc.date.issued2007-02-01en_US
dc.identifier.issn0018-9464en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TMAG.2006.888520en_US
dc.identifier.urihttp://hdl.handle.net/11536/5323-
dc.description.abstractIn this paper, a novel NAND flash memory controller was designed. A t-EC w-bit parallel Bose-Chaudhuri-Hocquengham (BCH) error-correction code (ECC) was designed for correcting the random bit errors of the flash memory chip, which is suitable for the randomly bit errors property and parallel I/O interface of the NAND-type flash memory. A code-banking mechanism was designed for the tradeoffs between the controller cost and the in-system programmability (ISP) support. With the ISP functionality and the Flash parameters programmed in the reserved area of the flash memory chip during the card production stage, the function for supporting various kinds of NAND flash memory could be provided by a single controller. In addition, built-in defect management and wear-leveling algorithm enhanced the product life cycle and reliability. Dual channel accessing of the Flash memory provided the good performance in data transfer rate. With respect to the proposed controller architecture, a real secure digital card (SD)/multimedia card (MMC) flash memory card controller chip was designed and implemented with UMC 0.18 mu m CMOS process. Experimental results show the designed circuit can fully comply with the system specifications and shows the good performances.en_US
dc.language.isoen_USen_US
dc.subjectBose-Chaudhuri-Hocquengham (BCH) error-correction code (ECC)en_US
dc.subjectflash storage systemsen_US
dc.subjectNAND flash memory controlleren_US
dc.subjectnonvolatile memoryen_US
dc.titleA NAND flash memory controller for SD/MMC flash memory carden_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1109/TMAG.2006.888520en_US
dc.identifier.journalIEEE TRANSACTIONS ON MAGNETICSen_US
dc.citation.volume43en_US
dc.citation.issue2en_US
dc.citation.spage933en_US
dc.citation.epage935en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:000244011300080-
顯示於類別:會議論文


文件中的檔案:

  1. 000244011300080.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。