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dc.contributor.authorHuang, H. W.en_US
dc.contributor.authorLai, F. I.en_US
dc.contributor.authorHuang, J. K.en_US
dc.contributor.authorLin, C. H.en_US
dc.contributor.authorLee, K. Y.en_US
dc.contributor.authorLin, C. F.en_US
dc.contributor.authorYu, C. C.en_US
dc.contributor.authorKuo, H. C.en_US
dc.date.accessioned2014-12-08T15:06:48Z-
dc.date.available2014-12-08T15:06:48Z-
dc.date.issued2010-06-01en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0268-1242/25/6/065007en_US
dc.identifier.urihttp://hdl.handle.net/11536/5341-
dc.description.abstractGaN (gallium nitride)-based light-emitting diodes (LEDs) with a nano-scale SiO(2) structure between a transparent indium-tin oxide (ITO) layer and p-GaN were fabricated. The forward voltage at 20 mA for a GaN-based LED with a SiO(2) nano-scale structure was slightly higher than that of a conventional GaN-based LED because the total area of the p-type metal contact between the transparent ITO layer and p-GaN was smaller. However, the light output power for the GaN-based LED with a nano-scale structured SiO(2) at 20 mA was 24% higher than that for a conventional GaN-based LED structure. This increase in the light output power is mostly attributed to the scattering of light from the SiO(2) photonic quasi-crystal (PQC) layer.en_US
dc.language.isoen_USen_US
dc.titleEnhancement of light output power of GaN-based light-emitting diodes using a SiO(2) nano-scale structure on a p-GaN surfaceen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0268-1242/25/6/065007en_US
dc.identifier.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.citation.volume25en_US
dc.citation.issue6en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
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