標題: | Investigation of light absorption properties and acceptance angles of nanopatterned GZO/a-Si/p(+)-Si photodiodes |
作者: | Chen, Cheng-Pin Lin, Pei-Hsuan Hung, Yen-Jen Hsu, Shao-Shun Chen, Liang-Yi Cheng, Yun-Wei Ke, Min-Yung Huang, Ying-Yuan Chang, Chun-Hsiang Chiu, Ching-Hua Kuo, Hao-Chung Huang, JianJang 光電工程學系 Department of Photonics |
公開日期: | 28-五月-2010 |
摘要: | In this work, n-GZO/a:amorphous-Si(i:intrinsic)/p(+)-Si photodiodes are fabricated. We employed a nanosphere lithographic technique to obtain nanoscale patterns on either the a-Si(i) or p(+)-Si surface. As compared with the planar n-GZO/p(+)-Si diode, the devices with nanopatterned a-Si(i) and nanopatterned p(+)-Si substrates show a 32% and 36.2% enhancement of photoresponsivity. Furthermore, the acceptance angle measurement reveals that the nanostructured photodiodes have larger acceptance angles than the planar structure. It also shows that the device with the nanocone structure has a higher acceptance angle than that with the nanorod structure. |
URI: | http://dx.doi.org/10.1088/0957-4484/21/21/215201 http://hdl.handle.net/11536/5386 |
ISSN: | 0957-4484 |
DOI: | 10.1088/0957-4484/21/21/215201 |
期刊: | NANOTECHNOLOGY |
Volume: | 21 |
Issue: | 21 |
結束頁: | |
顯示於類別: | 期刊論文 |