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dc.contributor.authorDong, Ji-Yaoen_US
dc.contributor.authorHsu, Yung-Jungen_US
dc.contributor.authorWong, David Shan-Hillen_US
dc.contributor.authorLu, Shih-Yuanen_US
dc.date.accessioned2014-12-08T15:06:54Z-
dc.date.available2014-12-08T15:06:54Z-
dc.date.issued2010-05-20en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp102396fen_US
dc.identifier.urihttp://hdl.handle.net/11536/5395-
dc.description.abstractAn environmentally friendly antisolvent approach, which involves only biocompatible chemicals and mild processing conditions, was developed to prepare various ZnO nanostructures including twin-cones and nanorods with controllable dimensions, The method was based on the dissolution of ZnO powders in a deep eutectic solvent (DES), followed by precipitation of ZnO nanostructures from the DES upon introduction of an antisolvent. It is the first example of the room temperature ionic liquid based antisolvent process for preparation of nanomaterials. Through suitably modulating the processing conditions, such as the ethanol content of the antisolvent and the injection time of the ZnO-containing DES, the morphology of the resulting ZnO nanostructures can be readily controlled. Anisotropic crystal growth was achieved without severe reaction conditions, such as high temperatures and high vacuums, or use of environmentally harmful chemicals, such as long carbon chain surfactants and capping reagents. The present method can be readily extended to produce versatile nanostructures of other functional materials.en_US
dc.language.isoen_USen_US
dc.titleGrowth of ZnO Nanostructures with Controllable Morphology Using a Facile Green Antisolvent Methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp102396fen_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume114en_US
dc.citation.issue19en_US
dc.citation.spage8867en_US
dc.citation.epage8872en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000277500000026-
dc.citation.woscount32-
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