完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Tsai, I-Ling | en_US |
dc.contributor.author | Chung, Chung-Hou | en_US |
dc.date.accessioned | 2019-04-03T06:38:18Z | - |
dc.date.available | 2019-04-03T06:38:18Z | - |
dc.date.issued | 2010-05-15 | en_US |
dc.identifier.issn | 1098-0121 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.81.195305 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/5402 | - |
dc.description.abstract | We study finite-size effect of the Kondo screening cloud in a double quantum dot setup via a large-N slave-boson mean-field theory. In this setup, one of the dots is embedded in a close metallic ring with a finite size L and the other dot is side coupled to the embedded dot via an antiferromagnetic spin-spin-exchange coupling with a strength K. The antiferromagnetic coupling favors local spin-singlet state and suppresses the Kondo screening. The mean-field phase diagram as a function of 1/L and K shows a crossover to the local spin-singlet ground state from the Kondo phase to occur at K < K(c) (L = 4n, 4n + 1, 4n + 3) and at K > K(c) (L = 4n + 2). The effective Kondo temperature T(k) (proptotional to inverse of the Kondo screening cloud size) shows the Kosterlitz-Thouless (KT) scaling at finite sizes for L = 4n, 4n + 2, indicating quantum transition of the KT type between the Kondo screened phase for K <= K(c) and a local spin-singlet phase for K >= K(c) in the thermodynamic limit with Kc being the critical value. The local density of states on the embedded quantum dot and the persistent current at finite sizes with different values of K are calculated in the crossover region. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Kondo effect in a side-coupled double quantum dot system embedded in a mesoscopic ring | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1103/PhysRevB.81.195305 | en_US |
dc.identifier.journal | PHYSICAL REVIEW B | en_US |
dc.citation.volume | 81 | en_US |
dc.citation.issue | 19 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000278142000074 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |