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dc.contributor.author余國正en_US
dc.contributor.authorKuo-Cheng Yuen_US
dc.contributor.author林恭如en_US
dc.contributor.authorGong-Ru Linen_US
dc.date.accessioned2014-12-12T02:06:02Z-
dc.date.available2014-12-12T02:06:02Z-
dc.date.issued2003en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT009124525en_US
dc.identifier.urihttp://hdl.handle.net/11536/54079-
dc.description.abstract本篇論文主要研究,矽離子佈植二氧化矽 (SiO2:Si+) 經1100oC 1-3小時高溫退火下,雜質與奈米矽晶 (nc-Si) 在SiO2:Si+的特性分析與所形成的半導體特性。 多重佈植條件的SiO2:Si+,在1100oC,3小時退火過後,nc-Si和激發光源強度的微光激螢光光譜 (m-PL) 相關特性中,直徑4 nm的nc-Si在m-PL 724 nm顯現出最強的峰值強度,而藉由激發光源強度從10 mW/cm2增加到300 mW/cm2,退火1小時和退火3小時的SiO2:Si+,分別發生小於1.2 nm和11 nm的紅位移現象,近一步觀察中,在激發光300 mW/cm2持續1小時的照射下,3小時退火的SiO2:Si+亦發現2.5 nm的紅位移現象,這樣的紅位移現象我們將他歸因為光照下nc-Si光離化產生SiO2:Si+內建表面電場所引發的異常量子侷限stark effect,再藉由光照下,表面電荷的累積與壓降測量實驗,說明了nc-Si光離化產生的內建表面電場與m-PL紅位移的關係。另一方面,我們討論在含有nc-Si的SiO2:Si+基底上,金屬-半導體-金屬光偵測器 (MSM-PD) 結構中,nc-Si增強光電導的特性。在電性結果中顯示,SiO2:Si+在退火引導的漏電流與nc-Si有著非常強烈的關係,其中在含有nc-Si的Al-SiO2:Si+其接觸電阻、片電阻與特性接觸電阻率分別為9.1×108 W、 6.6×1010 W cm2與3.4×1011 W/‪。而不同的載子傳輸模型也將提出並解釋nc-Si電流-電壓的特性關係,在數值模擬的顯現中,Schottky carrier transport模型是較符合金屬與SiO2:Si+的電流傳導機制,其飽和電流(Js)為4.4 pA,近一步含有nc-Si的MSM-PD量測中,nc-Si呈現出的光電流增益為3與光電流響應為6.69 nA/W。另外,在波長的響應中,當機發光源波長為745 nm時,我們發現最強的光電流值為42.6 pA。zh_TW
dc.description.abstractThis thesis investigated the characteristics of defects and nanocrystallite silicon (nc-Si) in the silicon-ion-implanted dioxide (SiO2:Si+) and the semi-conducting properties of the SiO2:Si+ with 1 to 3-hrs furnace-annealing processes at 1100oC. The pumping-intensity dependency of nc-Si related micro-photoluminescence (m-PL) from the multi-recipe Si-implanted quartz is characterized. After annealing at 1100oC for three hours, the intensity of m-PL at 724 nm contributed by nc-Si with a diameter of about 4 nm is the maximum. By increasing the pumping intensity from 10 kW/cm2 to 300 kW/cm2, the m-PLs of 1-hr and 3-hr annealed Si-implanted quartz samples are red-shifted by <1.2 nm and 11 nm, respectively. The m-PL of 3hr-annealed sample further red-shifts by 2.5 nm after pumping at 300 kW/cm2 for one hour. Such a red-shift in PL is attributed to the anomalous quantum stark effect under strong illumination, which photo-ionizes the buried nc-Si and initiates an electric field beneath the surface of Si-implanted quartz. The measurement of accumulating charges and voltage drop during illumination primarily elucidate the correlation between red-shift in PL and the photo-ionized nc-Si induced surface electric-field. On the other hands, the Si-nanocrystal-enhanced photoconductivity of a metal-semiconductor-metal photodetector (MSM-PD) made on multi-recipe SiO2:Si+ substrate is reported. The result of the electrical characteristics show that the annealing-induced leakage current of the SiO2:Si+ material are strongly related to the nc-Si. The Al-SiO2:Si+ contact resistance, contact resistivity and the sheet resistance of SiO2:Si+ containing the nc-Si structure are determined as 9.1×108 W, 6.6×1010 W cm2, and 3.4×1011 W/‪, respectively. Different carrier transport models are employed to elucidate the nc-Si related current-voltage characteristics. The simulation reveals that the Schottky carrier transport predominated the carrier transport between metal–SiO2:Si+ interface. The reverse-saturation current (Js) for the SiO2:Si+ based MSM-PD is 4.4 pA. The MSM-PD exhibits photocurrent gain of 3 and responsivity of 6.69 nA/W. Wavelength dependent photoconductivity is also observed a maximum photocurrent of 42.6 pA at wavelength of 745 nm.en_US
dc.language.isoen_USen_US
dc.subject矽離子佈植二氧化矽zh_TW
dc.subject奈米矽晶zh_TW
dc.subject光激螢光光譜zh_TW
dc.subject光電導特性zh_TW
dc.subjectSi-implanteden_US
dc.subjectSi nanocrystalliteen_US
dc.subjectPhotoluminescenceen_US
dc.subjectphotoconductivityen_US
dc.title矽離子佈植二氧化矽中雜質與奈米矽晶特性分析zh_TW
dc.titleCharacteristics of Defects and Naoncrystallite Silicon in Silicon Implanted Silicon Dioxideen_US
dc.typeThesisen_US
dc.contributor.department光電工程學系zh_TW
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