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dc.contributor.authorChen, J. Y.en_US
dc.contributor.authorSun, K. W.en_US
dc.date.accessioned2014-12-08T15:06:55Z-
dc.date.available2014-12-08T15:06:55Z-
dc.date.issued2010-05-01en_US
dc.identifier.issn0927-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.solmat.2010.01.005en_US
dc.identifier.urihttp://hdl.handle.net/11536/5420-
dc.description.abstractIn this work we investigated the effects of growth time, spin-coating rates, and solution concentration on the reflection properties of the solution-grown ZnO nanorod arrays. The vertically aligned nanorod arrays were deposited on the surface of the Si solar cells as the antireflection (AR) layer. We found that the nanorod morphology, controlled through synthetic chemistry, has a great effect on the AR layer performance. We also demonstrated that the light harvest efficiency of the solar cells was greatly improved from 10.4% to 12.8% by using the vertically aligned ZnO nanorod arrays as the AR layer on poly-Si solar cells. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectNanorod arrayen_US
dc.subjectAntireflectionen_US
dc.subjectSolution synthesisen_US
dc.titleGrowth of vertically aligned ZnO nanorod arrays as antireflection layer on silicon solar cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.solmat.2010.01.005en_US
dc.identifier.journalSOLAR ENERGY MATERIALS AND SOLAR CELLSen_US
dc.citation.volume94en_US
dc.citation.issue5en_US
dc.citation.spage930en_US
dc.citation.epage934en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000277353900036-
dc.citation.woscount57-
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