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dc.contributor.authorLin, CFen_US
dc.contributor.authorCheng, HCen_US
dc.contributor.authorHuang, JAen_US
dc.contributor.authorFeng, MSen_US
dc.contributor.authorGuo, JDen_US
dc.contributor.authorChi, GCen_US
dc.date.accessioned2014-12-08T15:01:46Z-
dc.date.available2014-12-08T15:01:46Z-
dc.date.issued1997-05-12en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/11536/543-
dc.description.abstractIn this letter, we report the observation of the enhanced electron mobility in three different Al0.08Ga0.92N/GaN heterostructures. These structures were deposited on (0001) 6H-SiC substrates by using the low-pressure metalorganic chemical vapor deposition method. The structure was composed of 500 Angstrom AlGaN compositional stair-step layer deposited onto 1.3 mu m GaN epitaxial layer. There is a 100 Angstrom GaN Cap layer on top of the AlGaN layer to prevent the oxidation of the AlGaN layer. By using the van der Pauw method of Hall measurement, the sheet carrier density and mobility for Al0.08Ga0.92N/GaN heterostructure are 6.6x10(12) cm(-2) and 5413 cm(2)/Vs at 77 K, respectively. This high value of mobility is, to the best of our knowledge, the first observed two-dimensional electron gas (2DEG) at the AlGaN/GaN stair-step type of heterostructure. Other interface structures such as graded composition and bulk composition structures were also prepared and 2DEG properties were observed. (C) 1997 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleMobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructuresen_US
dc.typeArticleen_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume70en_US
dc.citation.issue19en_US
dc.citation.spage2583en_US
dc.citation.epage2585en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentNano Facility Centeren_US
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