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dc.contributor.authorLin, Horng-Chihen_US
dc.contributor.authorKuo, Chia-Haoen_US
dc.contributor.authorLi, Guan-Jangen_US
dc.contributor.authorSu, Chun-Jungen_US
dc.contributor.authorHuang, Tiao-Yuanen_US
dc.date.accessioned2014-12-08T15:06:58Z-
dc.date.available2014-12-08T15:06:58Z-
dc.date.issued2010-05-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2010.2041744en_US
dc.identifier.urihttp://hdl.handle.net/11536/5450-
dc.description.abstractWe investigate the operation of a new device featuring a side-gate scheme and suspended poly-Si nanowire (NW) channels. The fabrication adopted a sidewall-spacer-etching technique to form the poly-Si NW channels. The NW channels were further suspended using a simple wet-etching step. An interesting hysteresis phenomenon is observed in the I-V characteristics. In addition, a steep subthreshold swing (< 60 mV/dec) is also observed in the transfer curves. A scenario is proposed to explain the operation of such a device.en_US
dc.language.isoen_USen_US
dc.subjectHysteresisen_US
dc.subjectMOSFETen_US
dc.subjectnanowire (NW)en_US
dc.subjectpoly-Sien_US
dc.titleOperation of a Novel Device With Suspended Nanowire Channelsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2010.2041744en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume31en_US
dc.citation.issue5en_US
dc.citation.spage384en_US
dc.citation.epage386en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000277047300001-
dc.citation.woscount8-
Appears in Collections:Articles


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