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dc.contributor.authorLin, WJen_US
dc.contributor.authorTseng, TYen_US
dc.contributor.authorLin, SPen_US
dc.contributor.authorTu, SLen_US
dc.contributor.authorChang, Hen_US
dc.contributor.authorYang, SJen_US
dc.date.accessioned2014-12-08T15:01:46Z-
dc.date.available2014-12-08T15:01:46Z-
dc.date.issued1997-05-01en_US
dc.identifier.issn0002-7820en_US
dc.identifier.urihttp://hdl.handle.net/11536/545-
dc.description.abstractLead lanthanum zirconate titanate (Pb1-xLax(Zr-y,Ti-z)O-3, PLZT) films containing [00l] preferentially oriented grains were produced successfully on YBa2Cu3O7-x-coated (YBCO-coated) SrTiO3, (STO) or YBCO/CeO2-coated silicon substrates; films containing randomly oriented grains were created on platinum-coated silicon substrates. The latter possessed significantly inferior ferroelectric properties, a fact ascribed to the presence of a paraelectric phase (TiO2,) at the PLZT/platinum interface. On the other hand, the PLZT/YBCO/STO films exhibited better electrical properties than did the PLZT/YBCO/CeO2/Si films, and this phenomenon was attributed to better alignment of the grains in normal and in-plane orientations. In terms of fatigue properties, the [00l] textured films that were deposited on YBCO/CeO2/Si substrates possessed substantially superior polarization-switching-cycle endurance versus the randomly oriented films grown on Pt(Ti)/Si substrates. Moreover, the tetragonal films behaved much more satisfactorily than did the rhombohedral PLZT films. The ferroelectric parameters of tetragonal PLZT films showed no significant degradation up to 10(9) polarization switching cycles, whereas the remnant polarization and coercive force of the rhombohedral PLZT films had already degraded to 80% of their initial values after 10(8) cycles.en_US
dc.language.isoen_USen_US
dc.titleInfluence of crystal structure on the fatigue properties of Pb1-xLax(Zr-y,Ti-z)O-3 thin films prepared by pulsed-laser deposition techniqueen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE AMERICAN CERAMIC SOCIETYen_US
dc.citation.volume80en_US
dc.citation.issue5en_US
dc.citation.spage1065en_US
dc.citation.epage1072en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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