The synthesis of diamond films on adamantane-coated Si substrate at low temperature

doi:10.1016/j.cej.2010.01.024

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Tiwari, Rajanish N.	en_US
dc.contributor.author	Tiwari, Jitendra N.	en_US
dc.contributor.author	Chang, Li	en_US
dc.date.accessioned	2014-12-08T15:07:02Z	-
dc.date.available	2014-12-08T15:07:02Z	-
dc.date.issued	2010-04-15	en_US
dc.identifier.issn	1385-8947	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.cej.2010.01.024	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5510	-
dc.description.abstract	Diamond films have been synthesized on the adamantane-coated Si (1 00) substrate by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen gases with a growth rate of similar to 6.7 nm/min. The substrate temperature was similar to 475 degrees C during diamond deposition. The films obtained have good crystallinity that is characterized by scanning electron microscopy and Raman spectrometry. X-ray photoelectron spectroscopy analysis has confirmed that diamond nucleation and growth are on SiC rather than clean Si. The possible mechanism of high rate growth diamond films has been demonstrated. (C) 2010 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Diamond	en_US
dc.subject	Adamantane	en_US
dc.subject	MPCVD	en_US
dc.title	The synthesis of diamond films on adamantane-coated Si substrate at low temperature	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.cej.2010.01.024	en_US
dc.identifier.journal	CHEMICAL ENGINEERING JOURNAL	en_US
dc.citation.volume	158	en_US
dc.citation.issue	3	en_US
dc.citation.spage	641	en_US
dc.citation.epage	645	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000276783300036	-
dc.citation.woscount	10	-
顯示於類別：	期刊論文

文件中的檔案：

000276783300036.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。