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dc.contributor.authorChen, Cheng-Changen_US
dc.contributor.authorShih, M. H.en_US
dc.contributor.authorYang, Yi-Chunen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2014-12-08T15:07:02Z-
dc.date.available2014-12-08T15:07:02Z-
dc.date.issued2010-04-12en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3399781en_US
dc.identifier.urihttp://hdl.handle.net/11536/5516-
dc.description.abstractWe demonstrated a 4.7 mu m GaN-based microdisk laser with 25-pair AlN/AlGaN distributed Bragg reflector in ultraviolet range without undercut or deeply-etching procedures. The distributed Bragg reflector provides a high reflectivity of 85%, and selects lasing mode around 375 nm wavelength. Under optical pumping conditions, the lasing action was observed with a low threshold power density of 0.03 kW/cm(2). We also characterized the whispering gallery mode profiles of the microdisk with finite-different time-domain simulation.en_US
dc.language.isoen_USen_US
dc.subjectaluminium compoundsen_US
dc.subjectdistributed Bragg reflector lasersen_US
dc.subjectfinite difference time-domain analysisen_US
dc.subjectgallium compoundsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectlaser modesen_US
dc.subjectmicrodisc lasersen_US
dc.subjectoptical pumpingen_US
dc.subjectwhispering gallery modesen_US
dc.subjectwide band gap semiconductorsen_US
dc.titleUltraviolet GaN-based microdisk laser with AlN/AlGaN distributed Bragg reflectoren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3399781en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume96en_US
dc.citation.issue15en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000276794100015-
dc.citation.woscount10-
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