完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLee, Y. J.en_US
dc.contributor.authorLee, C. H.en_US
dc.contributor.authorTung, L. T.en_US
dc.contributor.authorChiang, T. H.en_US
dc.contributor.authorLai, T. Y.en_US
dc.contributor.authorKwo, J.en_US
dc.contributor.authorHsu, C-Hen_US
dc.contributor.authorHong, M.en_US
dc.date.accessioned2014-12-08T15:07:03Z-
dc.date.available2014-12-08T15:07:03Z-
dc.date.issued2010-04-07en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/43/13/135101en_US
dc.identifier.urihttp://hdl.handle.net/11536/5524-
dc.description.abstractMolecular beam epitaxy grown Al(2)O(3)/Ga(2)O(3)(Gd(2)O(3))/In(0.20)Ga(0.80)As/GaAs has been rapidly thermal annealed to 850 degrees C in N(2). The hetero-structure remained intact, with the In(0.20)Ga(0.80)As/GaAs interface being free of misfit dislocation and In(0.20)Ga(0.80)As strained, as observed by high-resolution transmission electron microscopy and high-resolution x-ray diffraction using synchrotron radiation. Excellent capacitance-voltage characteristics as well as low electrical leakages were obtained. These structural and electrical results demonstrate that employing Ga(2)O(3)(Gd(2)O(3)) as a dielectric with an in situ Al(2)O(3) capping layer efficiently protects strained InGaAs layers from relaxing and volatilizing during rapid thermal annealing to 850 degrees C, important for fabricating inversion-channel InGaAs metal-oxide-semiconductor field-effect-transistors, a candidate for beyond the 16 nm node complementary MOS technology.en_US
dc.language.isoen_USen_US
dc.titleAl(2)O(3)/Ga(2)O(3)(Gd(2)O(3)) passivation on In(0.20)Ga(0.80)As/GaAs-structural intactness with high-temperature annealingen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0022-3727/43/13/135101en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.citation.volume43en_US
dc.citation.issue13en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
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