完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Iwakura, Izumi | en_US |
dc.contributor.author | Yabushita, Atushi | en_US |
dc.contributor.author | Kobayashi, Takayoshi | en_US |
dc.date.accessioned | 2014-12-08T15:07:03Z | - |
dc.date.available | 2014-12-08T15:07:03Z | - |
dc.date.issued | 2010-04-05 | en_US |
dc.identifier.issn | 0366-7022 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1246/cl.2010.374 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/5526 | - |
dc.description.abstract | The detailed processes in the Claisen rearrangement were observed. The process was vibrationally excited in the electronic ground state by a stimulated Raman process using a 5-fs pulse. The Claisen rearrangement was found to follow a three-step pathway. At first, the C(4)-O bond is weakened to generate a bis-allyl-like intermediate. Next, the formation of a weak C(1)-C(6) bond results in the generation of an aromatic-like intermediate. Finally, C(4)-O breaking and C(1)-C(6) formation occur simultaneously to generate the product. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Direct Observation of the Molecular Structural Changes during the Claisen Rearrangement Including the Transition State | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1246/cl.2010.374 | en_US |
dc.identifier.journal | CHEMISTRY LETTERS | en_US |
dc.citation.volume | 39 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 374 | en_US |
dc.citation.epage | 375 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000277209300027 | - |
dc.citation.woscount | 17 | - |
顯示於類別: | 期刊論文 |