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dc.contributor.authorHolcomb, M. B.en_US
dc.contributor.authorMartin, L. W.en_US
dc.contributor.authorScholl, A.en_US
dc.contributor.authorHe, Q.en_US
dc.contributor.authorYu, P.en_US
dc.contributor.authorYang, C. -H.en_US
dc.contributor.authorYang, S. Y.en_US
dc.contributor.authorGlans, P. -A.en_US
dc.contributor.authorValvidares, M.en_US
dc.contributor.authorHuijben, M.en_US
dc.contributor.authorKortright, J. B.en_US
dc.contributor.authorGuo, J.en_US
dc.contributor.authorChu, Y. -H.en_US
dc.contributor.authorRamesh, R.en_US
dc.date.accessioned2019-04-03T06:38:09Z-
dc.date.available2019-04-03T06:38:09Z-
dc.date.issued2010-04-01en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.81.134406en_US
dc.identifier.urihttp://hdl.handle.net/11536/5530-
dc.description.abstractThis study delineates the evolution of magnetic order in epitaxial films of the room-temperature multiferroic BiFeO(3) system. Using angle-and temperature-dependent dichroic measurements and spectromicroscopy, we have observed that the antiferromagnetic order in the model multiferroic BiFeO(3) evolves systematically as a function of thickness and strain. Lattice-mismatch-induced strain is found to break the easy-plane magnetic symmetry of the bulk and leads to an easy axis of magnetization which can be controlled through strain. Understanding the evolution of magnetic structure and how to manipulate the magnetism in this model multiferroic has significant implications for utilization of such magnetoelectric materials in future applications.en_US
dc.language.isoen_USen_US
dc.titleProbing the evolution of antiferromagnetism in multiferroicsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.81.134406en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume81en_US
dc.citation.issue13en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000277207900041en_US
dc.citation.woscount55en_US
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