完整後設資料紀錄
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dc.contributor.author李淑芬en_US
dc.contributor.authorLI,SHU-FENen_US
dc.contributor.author裘性天en_US
dc.contributor.authorQIU,XING-TIANen_US
dc.date.accessioned2014-12-12T02:08:43Z-
dc.date.available2014-12-12T02:08:43Z-
dc.date.issued1990en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT792500013en_US
dc.identifier.urihttp://hdl.handle.net/11536/55528-
dc.description.abstract本實驗以有機金屬化合物十二甲基環己矽烷(siMe ) 為單一來源起始物, si(100) 及si(11)矽晶片為基材, 應用熱壁水平式石英管為反應器在壓力約2x10 torr而溫度 950∼1200 ℃間進行低壓化學氣相沉積反應, 所得薄膜經X 光繞射儀(XRD: X-Ray di ffraction)、歐杰電子儀(AES: Auger Electron Spectroscopy)、化學分析電子儀(E SCA:Electron Spectro-scopy for Chemical Analysis) 、富立葉轉變紅外光譜儀(F T-IR:Fourier Transform Infrared Spectroscopy) 、掃描式電子顯微鏡(SEM:Scann ing Electron Microscope)、掃描穿透式電子顯微鏡(STEM:Scanning Transmission Electron Microscope)以及電子繞射儀(ED:Electron Diffraction) 分析後證實是多 晶性碳化矽, 且薄膜結晶度、元素組成和表面型態與溫度高低或其材種類關係甚鉅。zh_TW
dc.language.isozh_TWen_US
dc.subject十二甲環己矽烷zh_TW
dc.subject低壓化學zh_TW
dc.subject碳化矽薄膜zh_TW
dc.subjectAESen_US
dc.subjectXRDen_US
dc.subjectESCAen_US
dc.subjectSEMen_US
dc.subjectSTEMen_US
dc.subjectEDen_US
dc.title以十二甲基環己矽烷低壓化學氣相沉積碳化矽薄膜zh_TW
dc.typeThesisen_US
dc.contributor.department應用化學系碩博士班zh_TW
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