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dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorLin, Chia-Hsienen_US
dc.contributor.authorFu, Ying-Jheen_US
dc.contributor.authorLin, Ta-Chunen_US
dc.contributor.authorLin, Hsuanen_US
dc.contributor.authorCheng, Shuen-Jenen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorLee, Chien-Pingen_US
dc.date.accessioned2014-12-08T15:07:05Z-
dc.date.available2014-12-08T15:07:05Z-
dc.date.issued2010-04-01en_US
dc.identifier.issn1931-7573en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11671-010-9531-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/5554-
dc.description.abstractWe report on the diamagnetic responses of different exciton complexes in single InAs/GaAs self-assembled quantum dots (QDs) and quantum rings (QRs). For QDs, the imbalanced magnetic responses of inter-particle Coulomb interactions play a crucial role in the diamagnetic shifts of excitons (X), biexcitons (XX), and positive trions (X (-) ). For negative trions (X (-) ) in QDs, anomalous magnetic responses are observed, which cannot be described by the conventional quadratic energy shift with the magnetic field. The anomalous behavior is attributed to the apparent change in the electron wave function extent after photon emission due to the strong Coulomb attraction by the hole in its initial state. In QRs, the diamagnetic responses of X and XX also show different behaviors. Unlike QDs, the diamagnetic shift of XX in QRs is considerably larger than that of X. The inherent structural asymmetry combined with the inter-particle Coulomb interactions makes the wave function distribution of XX very different from that of X in QRs. Our results suggest that the phase coherence of XX in QRs may survive from the wave function localization due to the structural asymmetry or imperfections.en_US
dc.language.isoen_USen_US
dc.subjectQuantum dotsen_US
dc.subjectQuantum ringsen_US
dc.subjectMagnetophotoluminescenceen_US
dc.subjectDiamagnetic shiften_US
dc.titleImpacts of Coulomb Interactions on the Magnetic Responses of Excitonic Complexes in Single Semiconductor Nanostructuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11671-010-9531-3en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.citation.volume5en_US
dc.citation.issue4en_US
dc.citation.spage680en_US
dc.citation.epage685en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000276435500002-
dc.citation.woscount5-
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