標題: | Microstructure and Formation of Copper Oxide in the Cu Electro-Polishing Process |
作者: | Kung, Te-Ming Huang, Michael Rong-Shie Tsao, Jung-Chih Liu, Chuan-Pu Wang, Ying-Lang 照明與能源光電研究所 Institute of Lighting and Energy Photonics |
關鍵字: | Electropolishing;Cyclic Voltammetry (CV);Transmission Electron Microscopy (TEM);X-Ray Photoelectron Spectroscopy (XPS) |
公開日期: | 1-十一月-2010 |
摘要: | In this study, the formation of Cu oxide on Cu film is studied during Cu electropolishing in a phosphoric acid-based electrolyte with various Cu ion concentrations, from 2.28% to 10.08%. In cyclic voltammetry measurement, the maximum current density of the anodic peak (/(max)) decreases from 38.87 to 28.13 mA/cm(2) with increasing Cu ion concentration, indicating that an oxide film forms on the Cu film surface and the thickness increases with Cu ion concentration. Microstructures and crystallography of the oxide film are examined by transmission electron microscopy, which confirms the increase of the oxide film thickness due to the high Cu ion concentration in a H(3)PO(4) electrolyte. Three types of Cu oxide are detected using X-ray photoelectron spectroscopy, namely Cu(2)O, Cu(OH)(2), and CuO. With a Cu-ion electrolyte concentration of less than 6.99%, Cu(OH)(2) is dominant, while at higher Cu-ion concentrations, CuO predominates. The formation of CuO protects Cu from corrosion in the electrolyte with the Cu-ion concentration of over 6.99%. |
URI: | http://dx.doi.org/10.1166/jnn.2010.2899 http://hdl.handle.net/11536/5568 |
ISSN: | 1533-4880 |
DOI: | 10.1166/jnn.2010.2899 |
期刊: | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY |
Volume: | 10 |
Issue: | 11 |
起始頁: | 7065 |
結束頁: | 7069 |
顯示於類別: | 會議論文 |