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dc.contributor.authorCheng, Shiau-Shinen_US
dc.contributor.authorChen, Guan-Yuanen_US
dc.contributor.authorChen, Jia-Haoen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.contributor.authorChu, Chih-Weien_US
dc.date.accessioned2014-12-08T15:07:08Z-
dc.date.available2014-12-08T15:07:08Z-
dc.date.issued2010-04-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2009.12.018en_US
dc.identifier.urihttp://hdl.handle.net/11536/5595-
dc.description.abstractIn this study, we report the electrical characterization of complementary inverters fabricated using n- and p-channel organic vertical-type triodes (OVTs) on the same substrate. Because of the similar performance of the p-channel OVT (ON current: similar to 229 mu A; OFF current: similar to 67.6 nA; turn-on voltage: similar to 0.8 V) and n-channel OVT (ON current: 377 mu A; OFF current: 86.9 nA; turn-on voltage: 0.4 V), the complementary inverter combining the n- and p-channel OVTs exhibited a voltage gain of ca. 9 at a low supply voltage of 4 V. (C) 2009 Elsevier B. V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectVertical-type triodeen_US
dc.subjectLow-voltageen_US
dc.subjectComplementary inverteren_US
dc.subjectCorresponding gainen_US
dc.titleLow-voltage complementary inverters employing organic vertical-type triodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2009.12.018en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume11en_US
dc.citation.issue4en_US
dc.citation.spage692en_US
dc.citation.epage695en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000275793300028-
dc.citation.woscount8-
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