以射頻磁控濺鍍法在壓克力基板上製備銦錫氧薄膜之研究

Full metadata record

DC Field	Value	Language
dc.contributor.author	謝叔達	en_US
dc.contributor.author	XIE, SHO-DA	en_US
dc.contributor.author	邱碧秀	en_US
dc.contributor.author	QIU, BI-XIU	en_US
dc.date.accessioned	2014-12-12T02:09:29Z	-
dc.date.available	2014-12-12T02:09:29Z	-
dc.date.issued	1991	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT802430044	en_US
dc.identifier.uri	http://hdl.handle.net/11536/56077	-
dc.description.abstract	以射頻磁控濺鍍法製備銦錫氧薄膜於壓克力基板上已能成功地在低溫下成長出高品質的薄膜（在可見光區具有高穿透性、導電性良好、在紅外光區具有高反射率）。銦錫氧薄膜與壓克力基板間的附著力能藉由對壓克力基板進行反應式離子蝕刻而增加。壓克力的硬度值（17HK）在鍍上銦錫氧薄膜後增加到179.2HK 。銦錫氧薄膜的光學常數可由其穿透光譜圖上的干涉條紋推算並以銦錫氧薄膜做第一層設計出雙層Ｖ字型抗反射層。	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	射頻磁控濺鍍法	zh_TW
dc.subject	壓克力基板	zh_TW
dc.subject	製備銦錫氧薄膜	zh_TW
dc.title	以射頻磁控濺鍍法在壓克力基板上製備銦錫氧薄膜之研究	zh_TW
dc.title	Deposition of ITD thin films on acrylic substrates by RF magnetron sputtering	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子研究所	zh_TW
Appears in Collections:	Thesis