標題: Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition
作者: Ko, T. S.
Wang, T. C.
Chen, H. G.
Gao, R. C.
Huang, G. S.
Lu, T. C.
Kuo, H. C.
Wang, S. C.
光電工程學系
Department of Photonics
公開日期: 2007
摘要: In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and low-pressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 angstrom was obtained. The different thickness AlN as a nucleation layer and the different delta/beta ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and delta/beta ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85x10(10) /cm(2). (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
URI: http://hdl.handle.net/11536/5624
http://dx.doi.org/10.1002/pssc.200674714
ISSN: 1610-1634
DOI: 10.1002/pssc.200674714
期刊: Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4 No 7 2007
Volume: 4
Issue: 7
起始頁: 2510
結束頁: 2514
顯示於類別:會議論文


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