利用高週波濺鍍法製作氮化鋁與氧化鋅薄膜

Abstract

本研究利用高週波平面濺鍍法製作氮化鋁與氧化鋅薄膜，以改變長膜參數 ，如工作功率，工作壓力及基板溫度等，來影響薄膜順勢方向晶長的特性 。同時利用 X光繞射儀檢驗薄膜順勢方向的變化，以掃瞄式電子顯微鏡觀 察薄膜柱狀結構的形成，再加以紅外線光譜分析儀分析薄膜內部化學鍵結 合性質的改變。在本文中，我們以一個簡單的晶長模型： <l> = A * exp(-q/2kT) * t^1/2驗證各種長膜參數對於晶體順勢方向的影響，同時 利用 X光試片轉動 ]Rocking curve）的方法得知由於濺鍍靶方向的不同 ，直接影響薄膜晶體，使晶體柱狀結構產生傾斜的現像。 In this research, the AlN and ZnO films have been prepared by R. F. plane magnetron sputtering technique. The sputtering parameters such as R.F power, toal gas pressure, substrate temperature were varied to controll the preferred orientation of the grown films. The Crystal structure of films were analyzed by X-ray diffractometer and the film fiber texture were obsvered by scanning electron microscope, the optical absorption were measured by FTIR. A growth model associated with an equation <l>=A*exp(Q/2kT)*t^1/2, was proposed to explain the influence of various depostion parameters on growth habit. The results of X-ray rocking curve analyses indicated a tilted fiber texture of films were due to the oblique deposition.