以高週波磁控濺鍍法製備氧化鋅鎵螢光薄膜及其分析

Abstract

本實驗以高週波磁控濺鍍法製備氧化鋅鎵螢光薄膜,藉由鍍膜參數如：鍍 膜壓力,氧及氬之比例,輸出功率和基板溫度對氧化鋅鎵薄膜性質的影響, 並以X光繞射法來觀察長晶方向,以掃描式電子顯微鏡觀察表面結構而陰極 螢光分析儀用來偵測不同濺鍍條件下之螢光特性。本文中將探討不同成長 條件 對螢光特性之影響,結果顯示最佳之基板溫度為500°C,而介於激態 和發光中心之能隙約為2.64電子伏特,並且有波長4700 埃之藍色陰極螢光 特性,除此之外我們亦發現符合標準氧化鋅鎵 X光繞射格氏的薄膜才俱有 較佳之螢光特性。 ZnGa2O4 films have been prepared by R.F. magnetron sputtering technique. The films were grown at various total pressure, R.F. power and substrate temperatures. Microstructure and crystallographic orientation were characterized by X-ray diffraction (XRD). Surface morphologies were obserced by scanning electron microscope(SEM). In addition, cathodoluminescence(CL) measurement was employed to observe the emission spectra of ZnGa2O4 films. The influences of of various deposition parameters of the properties of grown films were studied. Furthermore, the relationship among growth condition, deposition rate and luminescent wavelength was investigeated. The optimum substrate temperature for deposition was about 500° C. The gap between excited state and luminescent center is about 2.64 eV. A blue cathodoluminescent emission peaked at 470 nm was observed. Good luminescent properties were observed on the films which bave the standard ZnGa2O4 X-ray diffraction pattern.