在鋁上成長堰層陽極氧化膜之研究

Abstract

在鋁上成長的結晶型陽極處理膜可在超薄切片技術及電子顯微鏡之觀察下 ，對其轉換 過程，有一較清楚了解。以熱處理法，先將鋁箔550oc熱處 理30分鐘，以產生結晶氧化鋁，爾後，再以這些氧化 鋁作為結晶核，成 長結晶氧化鋁。熱處理後，(100)面之結晶較小，且amorphous較少 ，(110)面之結晶較大，但亦有一些殘 留amorphous區域 。熱處理後鋁箔 ，在ammonium pentaborate (APB)和 ammonium dihydrogen phosphate (ADP)中化成，明顯的，由於磷離子之妨礙結晶，化成到180V時，ADP中化 成者較APB中化成者其膜厚較厚而結晶層較薄。由於各種缺陷（微裂縫， 縮孔）常伴隨化成結晶膜之生成而出現，故結晶層厚度之比例不足以完全 影響膜厚╱電壓比值。 The crystalline anodic film forming on aluminum has been invastigated by transmission electron microscopy of ultramicrotomed sections. Differences exist between the texture and (110) texture foil,it is found that the crystallites in (100) texture anodic film are smaller than that in (110) texture anodic film; furthermore,the former has less amorphous zone than that of the letter. In the thermal pretreatment,the aluminum foils were anodized in ammonium petaborate(APB) and ammonium dihydrogen phosphate (ADP)solutions.evidentally, because of phosphate ions slowed down the crystalline speed, when anodizing to 180V ,the ADP-anodized foil has less crystalline thickness and greater total thickness than that of APB-anodized foil Since various defects(microfissures, porosity...) always occured within crystallizing region during anodizing,the dependence of nm/V ratio on the thickness of crystallizing region was not apparent.