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DC FieldValueLanguage
dc.contributor.authorMA, CHen_US
dc.contributor.authorYANG, WCen_US
dc.contributor.authorCHANG, CYen_US
dc.date.accessioned2014-12-08T15:07:13Z-
dc.date.available2014-12-08T15:07:13Z-
dc.date.issued1974-01-01en_US
dc.identifier.issn0020-7217en_US
dc.identifier.urihttp://hdl.handle.net/11536/5685-
dc.description.abstracten_US
dc.language.isoen_USen_US
dc.titleSTUDY OF CHARACTERISTICS OF A MG-SI DIODEen_US
dc.typeArticleen_US
dc.identifier.journalINTERNATIONAL JOURNAL OF ELECTRONICSen_US
dc.citation.volume36en_US
dc.citation.issue4en_US
dc.citation.spage507en_US
dc.citation.epage510en_US
dc.contributor.department工學院zh_TW
dc.contributor.departmentCollege of Engineeringen_US
Appears in Collections:Articles