利用藍達金氧半場效電晶體架構產生之新高效率金氧半靜態存取記憶細胞－設計及分析

Abstract

本文利用三端點藍達金氧半場效電晶體之負微分電阻特性提出一些新式架 構的靜態隨意存取記憶細胞。利用此新記憶細胞的快速動態性能，我們設 計完成一個新高效率的靜態隨意存取記憶體。此外，本文不但詳盡地討論 單邊讀取運作的優點，而且提出單邊讀取的新感測技巧，並且採用了新構 想來強化感測放大器的性能。利用新 式靜態隨意存取記憶細胞及新型感 測放大器的優點，高速讀取運作可以達成。最後，我們利用電路分析程式 （ SPICE）來證實本文所提出的新記憶電路的性能。 This thesis proposes several new circuit configuration for a static memory cell based on the Lambda MOSFET which exhibits the equivalent three-terminal λ- type negative differential resistance. Because of its fast transient behavior , a high- performance SRAM is designed with this new basic cell. This thesis discusses in detail the advantages of one-sided read operation, futher , presents a new sensing technique. Some ideas are adopted to optimize the performance of sense amplif- ier. High speed read operation is obtained by the merits of this new basic cell and the novel sense amplifier is presented . With the help of a network analysis program SPICE, the perf- ormance of circuits proposed in this thesis is verfied.