離子佈植之蒙地卡羅模擬

Abstract

吾人發展完成一種蒙地卡羅模擬程式, 可以用來決定非晶質單元素靶和多 元素靶如金屬矽化物和氧化矽在離子植入過程中之離子射程分佈,同時,亦 可求得多層靶中反彈離子之射程分佈. 在此程式中, 莫里耳電位, Kr-C電 位, 和通用電位被選擇性地用來計算核子碰撞. 至於電子阻擋力量 , 使 用LSS 模式和ZBL 模式所得的結果均與實驗值比較. 而本程式的模擬結果 與實驗值有良好的一致性. 而其中的某些結果比TRIM程式更接近實驗值. A Monte Carlo simulation program has been developed to calcu- late ion range distributions in amorphous single-element targets, ion distributions in multi-element targets such as silicides and silicon dioxide, as well as recoil range distributions in multi- layered targets. Moliere potential, Kr- C potential and universal potential are used alternatively in the program for the calcu- lations of nuclear stopping power. As for electronic stopping power, simulation results of LSS model and ZBL model are compared together with the experimental data. Results obtained by this simulation are in good agreement with experimental data. Some of these give better agreement with experimental data as compared with the TRIM results.