完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | SU, S | en_US |
dc.contributor.author | SZE, S | en_US |
dc.date.accessioned | 2014-12-08T15:07:13Z | - |
dc.date.available | 2014-12-08T15:07:13Z | - |
dc.date.issued | 1973-01-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/T-ED.1973.17695 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/5692 | - |
dc.description.abstract | en_US | |
dc.language.iso | en_US | en_US |
dc.title | DESIGN CONSIDERATIONS OF HIGH-EFFICIENCY GAAS IMPATT DIODES | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/T-ED.1973.17695 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | ED20 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 541 | en_US |
dc.citation.epage | 543 | en_US |
dc.contributor.department | 工學院 | zh_TW |
dc.contributor.department | College of Engineering | en_US |
顯示於類別: | 期刊論文 |