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DC FieldValueLanguage
dc.contributor.authorSU, Sen_US
dc.contributor.authorSZE, SMen_US
dc.date.accessioned2014-12-08T15:07:13Z-
dc.date.available2014-12-08T15:07:13Z-
dc.date.issued1973-01-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/T-ED.1973.17739en_US
dc.identifier.urihttp://hdl.handle.net/11536/5693-
dc.description.abstracten_US
dc.language.isoen_USen_US
dc.titleDESIGN CONSIDERATIONS OF LOW-NOISE HIGH-EFFICIENCY SILICON IMPATT DIODESen_US
dc.typeLetteren_US
dc.identifier.doi10.1109/T-ED.1973.17739en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volumeED20en_US
dc.citation.issue8en_US
dc.citation.spage755en_US
dc.citation.epage757en_US
dc.contributor.department工學院zh_TW
dc.contributor.departmentCollege of Engineeringen_US
Appears in Collections:Articles


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