Etching of GaN by microwave plasma of hydrogen

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DC 欄位	值	語言
dc.contributor.author	Tiwari, Rajanish N.	en_US
dc.contributor.author	Chang, Li	en_US
dc.date.accessioned	2014-12-08T15:07:16Z	-
dc.date.available	2014-12-08T15:07:16Z	-
dc.date.issued	2010-03-04	en_US
dc.identifier.issn	0268-1242	en_US
dc.identifier.uri	http://dx.doi.org/10.1088/0268-1242/25/3/035010	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5736	-
dc.description.abstract	An etching process for GaN on a sapphire substrate using a microwave plasma of hydrogen has been studied. Scanning electron microscopy observations of the surface morphology show that the etching of GaN with H(2) plasma can lead to the formation of etch pits in hexagonal shape. The average size of hexagonal pits is greater than 200 nm. The effects of processing pressure and etching time are demonstrated.	en_US
dc.language.iso	en_US	en_US
dc.title	Etching of GaN by microwave plasma of hydrogen	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1088/0268-1242/25/3/035010	en_US
dc.identifier.journal	SEMICONDUCTOR SCIENCE AND TECHNOLOGY	en_US
dc.citation.volume	25	en_US
dc.citation.issue	3	en_US
dc.citation.epage		en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000274318300023	-
dc.citation.woscount	1	-
顯示於類別：	期刊論文

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