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dc.contributor.authorChen, J-R.en_US
dc.contributor.authorWu, Y-C.en_US
dc.contributor.authorLing, S-C.en_US
dc.contributor.authorKo, T-S.en_US
dc.contributor.authorLu, T-C.en_US
dc.contributor.authorKuo, H-C.en_US
dc.contributor.authorKuo, Y-K.en_US
dc.contributor.authorWang, S-C.en_US
dc.date.accessioned2014-12-08T15:07:17Z-
dc.date.available2014-12-08T15:07:17Z-
dc.date.issued2010-03-01en_US
dc.identifier.issn0946-2171en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00340-009-3856-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/5739-
dc.description.abstractThe physical mechanisms leading to the efficiency droop of InGaN/GaN light-emitting diodes (LEDs) are theoretically investigated. We first discuss the effect of Auger recombination loss on efficiency droop by taking different Auger coefficients into account. It is found that the Auger recombination process plays a significant nonradiative part for carriers at typical LED operation currents when the Auger coefficient is on the order of 10(-30) cm(6) s(-1). Furthermore, the InGaN/GaN multiple-quantum-well (MQW) LEDs with varied indium compositions in InGaN quantum wells are studied to analyze the wavelength-dependent efficiency droop. The simulation results show that the wavelength-dependent efficiency droop is caused by several different effects including non-uniform carrier distribution, electron overflow, built-in electrostatic field induced by spontaneous and piezoelectric polarization, and Auger recombination loss. These internal physical mechanisms are the critical factors resulting in the wavelength-dependent efficiency droop in InGaN/GaN MQW LEDs.en_US
dc.language.isoen_USen_US
dc.titleInvestigation of wavelength-dependent efficiency droop in InGaN light-emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s00340-009-3856-6en_US
dc.identifier.journalAPPLIED PHYSICS B-LASERS AND OPTICSen_US
dc.citation.volume98en_US
dc.citation.issue4en_US
dc.citation.spage779en_US
dc.citation.epage789en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000274685500026-
dc.citation.woscount24-
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