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dc.contributor.authorChen, J. Y.en_US
dc.contributor.authorSun, K. W.en_US
dc.date.accessioned2014-12-08T15:07:17Z-
dc.date.available2014-12-08T15:07:17Z-
dc.date.issued2010-03-01en_US
dc.identifier.issn0927-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.solmat.2009.11.028en_US
dc.identifier.urihttp://hdl.handle.net/11536/5743-
dc.description.abstractIn this report, the results of the fabrication of nanostructured Si molds by e-beam lithography and chemical wet etching are presented. A home-made pneumatic nanoimprint system was used to transfer the mold patterns to a PMMA layer on a Si template using the spin-coating replication/hot-embossing techniques. The patterned PMMA layer was peeled off from the Si template and directly transferred onto the surface of a poly-Si P-N junction solar cell device to serve as the anti-reflection (AR) layer. It provides a simple and low-cost means for large-scale Use in the production of AR layers for improving solar cell performance. A drastic reduction in reflectivity of the AR layer over a broad spectral range was demonstrated. In addition, the great improvement on the light harvest efficiency of the solar cells from 10.4% to 13.5% using the nanostructured PMMA layer as the AR layer was validated. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectNanoimprinten_US
dc.subjectAnti-reflectionen_US
dc.subjectSub-wavelength structureen_US
dc.titleEnhancement of the light conversion efficiency of silicon solar cells by using nanoimprint anti-reflection layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.solmat.2009.11.028en_US
dc.identifier.journalSOLAR ENERGY MATERIALS AND SOLAR CELLSen_US
dc.citation.volume94en_US
dc.citation.issue3en_US
dc.citation.spage629en_US
dc.citation.epage633en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000275073000038-
dc.citation.woscount54-
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