完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Fu, Y. J. | en_US |
dc.contributor.author | Lin, S. D. | en_US |
dc.contributor.author | Tsai, M. F. | en_US |
dc.contributor.author | Lin, H. | en_US |
dc.contributor.author | Lin, C. H. | en_US |
dc.contributor.author | Chou, H. Y. | en_US |
dc.contributor.author | Cheng, S. J. | en_US |
dc.contributor.author | Chang, W. H. | en_US |
dc.date.accessioned | 2019-04-03T06:37:54Z | - |
dc.date.available | 2019-04-03T06:37:54Z | - |
dc.date.issued | 2010-03-01 | en_US |
dc.identifier.issn | 1098-0121 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.81.113307 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/5751 | - |
dc.description.abstract | We report on the magnetic response of negative trions X(-) in single self-assembled InAs/GaAs quantum dots. Unlike the conventional quadratic diamagnetic shift for neutral excitons, the observed X(-) diamagnetic shifts are small and nonquadratic. In particular, we also observed a reversal in sign of the conventional diamagnetic shift. A theoretical analysis indicates that such anomalous behaviors for X(-) arise from an apparent change in the electron wave function extent after photon emission due to the strong Coulomb attraction induced by the hole in its initial state. This effect can be very pronounced in small quantum dots, where the electron wave function becomes weakly confined and extended much into the barrier region. When the electrons gradually lose confinement, the magnetic response of X(-) will transit gradually from the usual quadratic diamagnetic shift to a quartic dependence, and finally into a special paramagnetic regime with an overall negative energy shift. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Anomalous diamagnetic shift for negative trions in single semiconductor quantum dots | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1103/PhysRevB.81.113307 | en_US |
dc.identifier.journal | PHYSICAL REVIEW B | en_US |
dc.citation.volume | 81 | en_US |
dc.citation.issue | 11 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000276248800021 | en_US |
dc.citation.woscount | 13 | en_US |
顯示於類別: | 期刊論文 |