完整後設資料紀錄
DC 欄位語言
dc.contributor.authorFu, Y. J.en_US
dc.contributor.authorLin, S. D.en_US
dc.contributor.authorTsai, M. F.en_US
dc.contributor.authorLin, H.en_US
dc.contributor.authorLin, C. H.en_US
dc.contributor.authorChou, H. Y.en_US
dc.contributor.authorCheng, S. J.en_US
dc.contributor.authorChang, W. H.en_US
dc.date.accessioned2019-04-03T06:37:54Z-
dc.date.available2019-04-03T06:37:54Z-
dc.date.issued2010-03-01en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.81.113307en_US
dc.identifier.urihttp://hdl.handle.net/11536/5751-
dc.description.abstractWe report on the magnetic response of negative trions X(-) in single self-assembled InAs/GaAs quantum dots. Unlike the conventional quadratic diamagnetic shift for neutral excitons, the observed X(-) diamagnetic shifts are small and nonquadratic. In particular, we also observed a reversal in sign of the conventional diamagnetic shift. A theoretical analysis indicates that such anomalous behaviors for X(-) arise from an apparent change in the electron wave function extent after photon emission due to the strong Coulomb attraction induced by the hole in its initial state. This effect can be very pronounced in small quantum dots, where the electron wave function becomes weakly confined and extended much into the barrier region. When the electrons gradually lose confinement, the magnetic response of X(-) will transit gradually from the usual quadratic diamagnetic shift to a quartic dependence, and finally into a special paramagnetic regime with an overall negative energy shift.en_US
dc.language.isoen_USen_US
dc.titleAnomalous diamagnetic shift for negative trions in single semiconductor quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.81.113307en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume81en_US
dc.citation.issue11en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000276248800021en_US
dc.citation.woscount13en_US
顯示於類別:期刊論文


文件中的檔案:

  1. 4d9682add18d1b9d5a4535c056caa0ab.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。