利用光調制反射光譜技術測量低溫製備的蕭基接面之位障與半導體材料特性之研究

Abstract

本研究對低溫製程的蕭基接觸特性，利用光調制光譜加以探討。由於低溫 製程的金屬/ 半導介面有一類非結晶結構充當絕緣層，使得低溫製程之下 的蕭基接面有類金屬－絕緣體－半體結構，因此能提高位障的大小；由光 調制光譜的FKO(Franz-Keldysh Oscillation)量測顯示：低溫製備的蕭基 接面之內建電場是室溫製備的1.3 倍。此外，本文利用此一非破壞性的光 學量測系統，測量並探討GaAs/AlGaAs超晶格(superlattice)結構, InGaAs/GaAs應變量子阱雷射(strain quantum well laser)結構, InAlGaAs材料之電子能態結構。 In this thesis, we stuty Photoreflectance spectroscopy and the characteristics of Schottky contacts with cryogenic processing. The Schottky contacts with cryogenic processing reserve an amorphous-like structure at the interface. This metal-insulator -semiconductor(MIS)-like structure at the interface enhances the barrier height. From FKO( Franz-Keldysh Oscillation ) of photoreflectance spectroscopy shows that the built-in electric field of Schottky contacts in cryogenic processing is 1.3 times as large as in room temperature processing. In addition, we use the nondestructive measurement system to study the energy state of GaAs/AlGaAs superlattice, InGaAs/GaAs strain quantum well laser structure,InAlGaAs material.