砷化鋁鎵/砷化鎵的異質接面電晶體之研究

Abstract

在本文之中,我們敘述異質接面電晶體的基本操作.例如藉由模擬來分析陡 峭接面電晶體與陂度接面的特性,以及基極厚度對元件的影響.利用實驗方 式與一度空間模擬來分析討論我們所設計一些元件之結構上變化.利如在 射極與基極之間的電晶體(HBTs),或是在基極與集極間雙異質接面電晶體( DHBTs)中,加入一層Delta-doping,藉此可改善這兩個元件的特性.在這樣 的異質接面電晶體中,電流增益可超過800.另外,我們也藉由實驗來探討接 面(pn)位移對電晶體的影響.此外,我們利用一種叫磊晶層的移植(ELO)的 新技術,來製作電晶體,這樣做出來的異質接面電晶體是以前未見的,它的 電流增益與未移植的電晶體一樣都是在200左右. This thesis describes basic operation of HBTs. Abrupt and graded junction HBTs with various base thickness of base are studied by simulation. Several HBT structures are studied experimentally and theoretically analized by 1-D simulation. For example, a Delta- doped layer is inserted at EB junction for HBT or at BC junction for DHBT. This additional Delta-doped layer improves the performance of the two HBTs. The current gain of Delta-doped is over 800. In addition, experimental results of junction displacement are discussed by junction design. Moreover, a novel technology, epitaxial lift-off(ELO), is applied on HBTs. This is the first report for ELO HBT. Thecurrent gain of the ELO HBT is about 200 which is the same as that of the untransplanted HBT.