化學氣相沉積疊層閘極介電質在極大型積體電路之研究

Abstract

的進步，次微米元件的可靠度分析益形重要．化學氣相 質擁有低缺陷， 高崩潰電荷等優良特性；在另一方面，N2 高強度的介面鍵結．本文以結 合這兩項優點來比較TEOS疊層 q性參數，如崩潰電場，熱載子捕捉特性， 崩潰電荷等． 熱氧化層可以前置沉積氧化( BDO)或後續沉積氧化( PDO) 方式在O2或 N2O環境成長．在熱載子捕捉特性，崩潰電荷方面， 咰2 氧化層表現出等效或更好的特性．同時，0.65微米的金 垌EOS疊層作閘極 介電層，在熱載子效應方面顯示略差的電導衰退． As device dimensions are scaled down into the sub-micron egime, we must meet the challenge of fabricating robust gatedielectrics with low succeptibility to process- induceddegradation. The CVD stacked gate dielectric canrequirements of low defect density, highdown(Qbd) and high resistance toed damage. In this study, we present theces of thermal SiO2/TEOS and N2O oxynitride/TEOSielectrics, followed by a disscu- ssion of thesults. The thermal oxide in the stack can be formed either before-CVDdeposition-oxidation (BDO) or post-deposition-oxidation (PDO)O2 or N2O ambients. The impacts of stack formationbreakdown strength, trapping characteristics,evaluted in details. With respect to trappingO oxynitrided CVD TEOS oxides show equal orhan that of control oxide. The electrical.65 um MOSFET's utilizing thin (125 A) TEOSric devices have a slightly worsee degradation under channel- hot-carrier stressl gate oxide devices.