為單模增益耦合之分佈反饋半導體雷射之最佳化的理論與模擬

Abstract

為了符合現代光學通訊的需求,我們須要的半導體雷射在高速調變之下不 僅呈單模態,而且能呈窄線寬.而分佈反饋半導體雷射更能符合現代光學通 訊的需求.我們將研究實際的元件參數是如何影響耦合係數的大小並實際 分悉五種分別具有增益柵及損益柵的元件.我們將給出耦合係數的公式及 實際元件參數所形成影響的圖例. In order to meet the requirements for morden optical n,we need a semiconductor laser with not only e mode but also narrow linewidth under ultrahigh speed modulation.The gain coupled/ complex coupled DFB lasers can meet the above requirements. We will show how the real device parameters affect the magnitude and phase of coupling coefficients.We will analyze five different structures with either gain or loss grating .We will give the formulas and give the conditions at which the specific structure become a pure gain coupled device.