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dc.contributor.author周詠晃en_US
dc.contributor.authorYoung-Hoang Chouen_US
dc.contributor.author鍾世忠en_US
dc.contributor.authorDr. Shyh-Jong Chungen_US
dc.date.accessioned2014-12-12T02:12:22Z-
dc.date.available2014-12-12T02:12:22Z-
dc.date.issued1993en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT820436042en_US
dc.identifier.urihttp://hdl.handle.net/11536/58172-
dc.description.abstract本論文旨在分析封裝微帶線金屬兩側加電阻性薄膜時,對其混合模傳播特 性之影響. 文中我們對 "線方法" (The Method of Lines) 稍加休改,並 配合薄膜上之電阻性邊界條件求解. 為驗證分析方法及程式的正確性,首 先考慮微帶線 (薄膜電阻為無窮大) 及共面波導 (薄膜電阻為零) 各模 態的色散效應, 並與其它方法所得結果比較. 得出驗正後,我們改變薄膜 的寬度及電阻值,追蹤主模態及其它高階模態之傳播及衰減特性隨這兩個 參數的變化,最後找出能夠有效抑制高階模態但又不影響主模態特性的最 佳寬度及電阻的組合.zh_TW
dc.language.isoen_USen_US
dc.subject寄生模,衰減,電阻薄膜zh_TW
dc.subjectParasitic mode, Attenuation, Resistive filmen_US
dc.title基板上電阻薄膜對封裝微帶線寄生模之衰減效應分析zh_TW
dc.titleAttenuation of the parasitic modes in a shielded microstrip line by coating resistive films on the substrate.en_US
dc.typeThesisen_US
dc.contributor.department電信工程研究所zh_TW
Appears in Collections:Thesis