毫米波半光學式高功率固態電子元件陣列三倍頻器

Abstract

基於實際輸入功率電源的考量，本論文設計了一個在近場測量的毫米波半 光學式高功率固態電子元件陣列三倍頻器，輸出頻率為 100 GHz 。整個 三倍頻器系統的製造和測量也在此呈現。 蕭特基二極體被選作用來當為 單晶陣列三倍頻器之元件。 所以為了高截止頻率和高崩潰電壓所需的攙 雜濃度的最佳狀況必需被模擬。 三倍頻器系統所需的混成，單晶電路圖 型和濾波器都已經製造出來。而且單晶陣列二極體的良率是 65% 。濾波 器的特徵曲線和設計大致上相同。 另外，三倍頻器系統中近場常用的號 角天線和透鏡也要設計來符合現有實際輸入功率電源的要求。 因此，號 角天線和透鏡的校正是必要的。 一系列的實驗是來了解透鏡的特性。實 驗顯示可以把陣列二極體的尺寸增加來改善整個三倍頻器的性能。 未來 ，希望能結合下列兩個部份毫米波半光學式陣列倍頻器和金屬半導體場效 電晶體 (MESFET) 陣列或共振穿透二極體 (RTD) 陣列來形成在毫米波頻 段的高功率電源。 Based on consideration of practical input power source, a watt-level quasi-optical diode-grid frequency tripler with output frequency is designed under near-field illumination at 100 GHz range. Fabrication and measurements of the tripler system are also presented. Schottky diode is chosen for monolithic diode-grid. Optimization of doping concentration for high cutoff frequency and breakdown voltage is done. Both hybrid and monolithic circuit pattern, and the filter for the tripler were fabricated. The yield is 65% for monolithic diode-grid array. The characteristic of the filter has agreement with our design. Based on near-field condition, tripler system with horn and lens utilized current power source is designed. Calibration of lens, horn are necessary. A series experiment is presented in order to conform the behavior of lens. Finally, the experiment setup for whole tripler system is described. Therefore, there is no output power. The reason why we can not detect any output power is largely due to the diode-grid size. The performance of output power should be improved to make the grid size larger as possible. Glued more diodes on hybrid pattern and elevate the yield of monolithic diode-grid are the two improvement ways. In the future, we hope we can combine the two components: quasi-optical diode-grid frequency multiplier