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dc.contributor.authorChia, C. H.en_US
dc.contributor.authorLai, Y. J.en_US
dc.contributor.authorHan, T. C.en_US
dc.contributor.authorChiou, J. W.en_US
dc.contributor.authorHu, Y. M.en_US
dc.contributor.authorChou, W. C.en_US
dc.date.accessioned2014-12-08T15:07:24Z-
dc.date.available2014-12-08T15:07:24Z-
dc.date.issued2010-02-22en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3327338en_US
dc.identifier.urihttp://hdl.handle.net/11536/5827-
dc.description.abstractWe studied the power-dependent photoluminescence of ZnO nanopowder grown by sol-gel method at low temperature. At moderate optical pumping intensity, two nonlinear emission bands due to the radiative recombination of free biexciton and the inelastic exciton-exciton scattering were detected. We found that the threshold of the excitation density for the emergence of the nonlinear emission bands is low (< 18 W/cm(2)) in sol-gel ZnO nanopowders.en_US
dc.language.isoen_USen_US
dc.subjectbiexcitonsen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectnanoparticlesen_US
dc.subjectphotoluminescenceen_US
dc.subjectsol-gel processingen_US
dc.subjectzinc compoundsen_US
dc.titleHigh-excitation effect on photoluminescence of sol-gel ZnO nanopowderen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3327338en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume96en_US
dc.citation.issue8en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000275027200018-
dc.citation.woscount7-
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